Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements
نویسندگان
چکیده
Jeppe Johansen,1,* Søren Stobbe,1 Ivan S. Nikolaev,2,3 Toke Lund-Hansen,1 Philip T. Kristensen,1 Jørn M. Hvam,1 Willem L. Vos,2,3 and Peter Lodahl1,† 1COM·DTU, Department of Communications, Optics, and Materials, Technical University of Denmark, DTU-Building 345 V, DK-2800 Kgs. Lyngby, Denmark 2Center for Nanophotonics, FOM Institute for Atomic and Molecular Physics (AMOLF), 1098 SJ Amsterdam, The Netherlands 3Complex Photonics Systems, MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands Received 10 December 2007; published 12 February 2008
منابع مشابه
Frequency dependence of the radiative decay rate of excitons in self-assembled quantum dots: Experiment and theory
We analyze time-resolved spontaneous emission from excitons confined in self-assembled InAs quantum dots placed at various distances to a semiconductor-air interface. The modification of the local density of optical states due to the proximity of the interface enables unambiguous determination of the radiative and nonradiative decay rates of the excitons. From measurements at various emission e...
متن کاملSize distribution effects on self-assembled InAs quantum dots
We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these doubleemission peaks are assoc...
متن کاملIncreased InAs quantum dot size and density using bismuth as a surfactant
Articles you may be interested in RHEED transients during InAs quantum dot growth by MBE Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a " nucleation-augmented " method Appl. Area-controlled growth of InAs quantum dots and improvement of...
متن کاملTemperature dependence of optical linewidth in single InAs quantum dots
We consider the temperature dependence of the exciton linewidth in single InAs self-assembled quantum dots. We show that in cases where etched mesas are used to isolate the dots, the magnitude of the linear temperature coefficient and its dependence on mesa size are described well by exciton scattering by acoustic phonons whose lifetimes are given by phonon scattering from the mesa interfaces. ...
متن کاملWavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy
In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008